to-247-2l ? SF30A60U pb free plating product SF30A60U 30.0 ampere switchmode single fast recovery epitaxial diode pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature SF30A60U using the lastest fred fab process(planar passivation pellet) with ultrafast and soft recovery characteristics. absolute maximum ratings t c =25c unless otherwise specified electrical characteristics t c =25c unless otherwise specified symbol parameter test conditions values unit v r maximum d.c. reverse voltage 600 v v rrm maximum repetitive reverse voltage 600 v i f(av) average forward current t c =110c, per diode 30 a i f(rms) rms forward current t c =110c, per diode 42 a i fsm non-repetitive surge forward current t j =45c, t=10ms, 50hz, sine 300 a p d power dissipation 156 w t j junction temperature -40 to +150 c t stg storage temperature range -40 to +150 c torque module-to-sink recommended m3 1.1 nm r jc thermal resistance junction-to-case 0.8 c /w weight 6.0 g symbol parameter test conditions min. typ. max. unit v r =600v -- -- 15 a i rm reverse leakage current v r =600v, t j =125c -- -- 250 a i f =30a -- 2.0 -- v v f forward voltage i f =30a, t j =125c -- 1.65 -- v t rr reverse recovery time i f =1a, v r =30v, di f /dt=-200a/ s -- 22 -- ns t rr reverse recovery time -- 35 -- ns i rrm max. reverse recovery current v r =300v, i f =30a di f /dt=-200a/ s, t j =25c -- 2.5 -- a t rr reverse recovery time -- 110 -- ns i rrm max. reverse recovery current v r =300v, i f =30a di f /dt=-200a/ s, t j =125c -- 7.0 -- a
. . . i f (a) v f v fig1. forward voltage drop vs forward current t j =125c t j =25c 60 50 40 30 10 0 0 0.5 1.0 2.0 2.5 3.0 di f /dt a/ s fig2. reverse recovery time vs di f /dt 1000 800 600 400 200 0 0 40 t r r (ns) 80 120 160 200 v r =300v t j =125c i f =60 a i f =15 a i f =30 a i rrm (a) di f /dt a/ s fig3. reverse recovery current vs di f /dt 30 24 18 12 6 0 0 200 400 600 800 1000 di f /dt a/ s fig4. reverse recovery charge vs di f /dt 1000 800 600 400 200 0 0 200 q r r (nc) 400 600 800 v r =300v t j =125c i f =60a i f =15a i f =30 a v r =300v t j =125c i f =60a i f =30 a i f =15a k f duty 0.5 0.2 0.1 0.05 single pulse 0 0.2 0.4 1.2 0.6 10 1 10 -1 10 -2 10 -3 z thjc ( k/w ) 0.8 i rrm q r r t r r t j (c) fig5. dynamic parameters vs junction temperature 0 25 50 100 150 1 10 -1 10 -2 10 -3 10 -4 rectangular pulse duration (seconds) fig6. transient thermal impedance 75 125 1.5 1 1000 20 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 ? SF30A60U
fig7. diode reverse recovery test circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm ejector pin hole thickne ss (h) d c1 a a1 b1 b e c l h l2 e1 e2 l1 ? symbol dimensions in millimeters dimensions in inches min. max. min. max. a 4.850 5.150 0.191 0.200 a1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 d 15.450 15.750 0.608 0.620 e1 3.500 ref. 0.138 ref. e2 3.600 ref. 0.142 ref. l 40.900 41.300 1.610 1.626 l1 24.800 25.100 0.976 0.988 l2 20.300 20.600 0.799 0.811 ? 7.100 7.300 0.280 0.287 e 10.900 typ. 0.429 typ. h 5.980 typ. 0.235 typ. h 0.000 0.300 0.000 0.012 to-247-2l dimensions ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 ? SF30A60U
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